An 8T SRAM Array with Configurable Word Lines for In-Memory Computing Operation

نویسندگان

چکیده

In-memory computing (IMC) has been widely accepted to be an effective method improve energy efficiency. To realize IMC, operands in static random-access memory (SRAM) are stored columns, which contradicts SRAM write patterns and requires additional data movement. In this paper, 8T array with configurable word lines is proposed, where the arranged rows, following traditional storage pattern, therefore movement not required. The proposed structure supports three different modes. ternary multiplication mode, reference voltage generation column of only 1.273 fJ/bit. unsigned multibit discharge charging paths used enlarge difference least significant bit. logic operation types operations (e.g., IMP, OR, NOR, XNOR, XOR) achieved a single cycle. frequency up 909 MHz.

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ژورنال

عنوان ژورنال: Electronics

سال: 2021

ISSN: ['2079-9292']

DOI: https://doi.org/10.3390/electronics10030300